DG2032 Datasheet, PDF (2/5 Pages) Vishay Siliconix – High-Bandwidth, Low Voltage, Dual SPDT Analog Switch

DG2032
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NO^a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (Any terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . "50 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Power Dissipation (Packages)^b
12-Pin QFN (3 x 3) ^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1295 mW
Package Solder Reflow Conditions^d
12-Pin QFN (3 x 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 16.2 mW/_C above 70_C
d. Manual soldering with an iron is not recommended for leadless compo-
nents. The QFN is a leadless package. The end of the lead terminal is
exposed copper (not plated) as a result of the singulation process in
manufacturing. A solder fillet at the exposed copper lip cannot be guar-
anteed and is not required to ensure adequate bottom side solder inter-
connection.
SPECIFICATIONS (V+ = 3 V)
Parameter
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, "10%, V_IN = 0.4 or 2.0 V^e
Temp^a
Limits
- 40 to 85_C
Min^b Typ^c Max^b
Analog Switch
Analog Signal Range^d
On-Resistance
r_ON Flatness
r_ON Match Between Channels
Switch Off Leakage Current
Channel-On Leakage Current
Digital Control
V_NO, V_NC,
V_COM
Full
0
V+
r_ON
r_ON
Flatness
Dr_ON
V+ = 2.7 V, V_COM = 0.2 V/1.5 V
I_NO, I_NC = 10 mA
V+ = 2.7 V
V_COM = 0 to V+, I_NO, I_NC = 10 mA
Room
Full
Room
Room
3.0
5
6.5
1.6
0.4
I_NO(off),
I_NC(off)
I_COM(off)
V+ = 3.3 V, V_NO, V_NC = 0.3 V/3 V
V_COM = 3 V/0.3 V
Room
Full
-1
- 10
0.01
1
10
Room
Full
-1
- 10
0.01
1
10
I_COM(on)
V+ = 3.3 V, V_NO, V_NC = V_COM = 0.3 V/3 V
Room
Full
-1
- 10
0.01
1
10
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
V_IN = 0 or V+
Full
2.0
Full
0.4
Full
5
Full
1
1
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection^d
Off-Isolation^d
Crosstalk^d
N_O, N_C Off Capacitance^d
Channel-On Capacitance^d
Power Supply
t_ON
t_OFF
V_NO or V_NC = 2.0 V, R_L = 50 W, C_L = 35 pF
Room
Full
Room
Full
t_d
V_NO or V_NC = 2.0 V, R_L = 50 W, C_L = 35 pF
Full
1
Q_INJ
C_L = 1 nF, V_GEN = 0 V, R_GEN = 0 W
Room
OIRR
X_TALK
R_L = 50 W, C_L = 5 pF, f = 1 MHz
Room
Room
C_NO(off)
Room
C_NC(off)
C_NO(on)
V_IN = 0 or V+, f = 1 MHz
Room
Room
C_NC(on)
Room
28
53
59
13
38
38
38
- 78
- 82
15
15
49
45
Power Supply Current
I+
V_IN = 0 or V+
Full
0.01
1.0
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V_IN = input voltage to perform proper function.
Unit
V
W
nA
V
pF
mA
ns
pC
dB
pF
mA
www.vishay.com
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Document Number: 72387
S-31650—Rev. A, 18-Aug-03