DG2031 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Low-Voltage, Sub 1, Dual SPDT Analog Switch

DG2031
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NO^a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Continuous Current (NO, NC, COM) . . . . . . . . . . . . . . . . . . . . . . . "300 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "500 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
ESD per Method 3015.7 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . >2 kV
Power Dissipation (Packages)^b
MSOP-10^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 4.0 mW/_C above 70_C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, "10%, V_IN = 0.4 or 2.0 V^e
Temp^a
Limits
−40 to 85_C
Min^b Typ^c Max^b
Analog Signal Range^d
On-Resistance
r_ON Flatness^d
On-Resistance
Match Between Channels^d
Switch Off Leakage Current
Channel-On Leakage Current
V_NO, V_NC,
V_COM
r_ON
r_ON
Flatness
V+ = 2.7 V, V_COM = 0.6/1.5 V
I_NO, I_NC = 100 mA
Full
0
Room
Full
Room
Dr_DS(on)
Room
I_NO(off),
I_NC(off)
I_COM(off)
V+ = 3.3 V, V_NO, V_NC = 0.3 V/3 V
V_COM = 3 V/0.3 V
Room
−1
Full
−10
Room
−1
Full
−10
I_COM(on)
V+ = 3.3 V, V_NO, V_NC = V_COM = 0.3 V/3 V
Room
Full
−1
−10
0.50
0.12
V+
0.75
0.8
0.2
0.05
1
10
1
10
1
10
Digital Control
Input High Voltage^d
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
V_IN = 0 or V+
Full
1.6
Full
0.4
Full
9
Full
1
1
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection^d
Off-Isolation^d
Crosstalk^d
N_O, N_C Off Capacitance^d
Channel-On Capacitance^d
Power Supply
t_ON
t_OFF
V_NO or V_NC = 2.0 V, R_L = 50 W, C_L = 35 pF
Room
Full
Room
Full
t_d
V_NO or V_NC = 2.0 V, R_L = 50 W, C_L = 35 pF
Full
2
Q_INJ
C_L = 1 nF, V_GEN = 1.5 V, R_GEN = 0 W
Room
OIRR
X_TALK
R_L = 50 W, C_L = 5 pF, f = 100 KHz
Room
Room
C_NO(off)
Room
C_NC(off)
C_NO(on)
V_IN = 0 or V+, f = 1 MHz
Room
Room
C_NC(on)
Room
34
58
59
24
49
50
10
4
−71
−71
117
115
367
368
Power Supply Range
V+
1.8
5.5
Power Supply Current
I+
V_IN = 0 or V+
Full
0.01
1.0
Notes:
a. Room = 25°C, Full = as determined by the operating suffix.
b. Typical values are for design aid only, not guaranteed nor subject to production testing.
c. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
d. Guarantee by design, nor subjected to production test.
e. V_IN = input voltage to perform proper function.
Unit
V
W
nA
V
pF
mA
ns
pC
dB
pF
V
mA
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Document Number: 71966
S-41158—Rev. E, 21-Jun-04