DG2015 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Low-Voltage, Low rON, Dual DPDT Analog Switch

DG2015
Vishay Siliconix
New Product
ABSOLUTE MAXIMUM RATINGS
Reference to GND
V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to +6 V
IN, COM, NC, NO^a . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3 to (V+ + 0.3 V)
Current (Any terminal except NO, NC or COM) . . . . . . . . . . . . . . . . . . 30 mA
Continuous Current (NO, NC, or COM) . . . . . . . . . . . . . . . . . . . . . "150 mA
Peak Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "200 mA
(Pulsed at 1 ms, 10% duty cycle)
Storage Temperature (D Suffix) . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150°C
Package Solder Reflow Conditions^d
16-Pin QFN (4 x 4 mm) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240°C
Power Dissipation (Packages)^b
QFN-16^c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1880 mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by inter-
nal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC Board.
c. Derate 23.5 mW/_C above 70_C
d. Manual soldering with iron is not recommended for leadless components.
The QFN is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufactur-
ing. A solder fillet at the exposed copper lip cannot be guaranteed and is
not required to ensure adequate bottom side solder interconnection.
SPECIFICATIONS (V+ = 3 V)
Parameter
Analog Switch
Symbol
Test Conditions
Otherwise Unless Specified
V+ = 3 V, "10%, V_IN = 0.4 or 2.0 V^e
Analog Signal Range^d
V_NO, V_NC,
V_COM
On-Resistance
r_ON
V+ = 2.7 V, V_COM = 0.2 V/1.5 V, I_NO, I_NC = 100 mA
r_ON Flatness
r_ON Match
Switch Off Leakage Current
r_ON
Flatness
Dr_ON
I_NO(off),
I_NC(off)
I_COM(off)
V+ = 2.7 V
V_COM = 0 to V+, I_NO, I_NC = 100 mA
V+ = 3.3 V, V_NO, V_NC = 1 V/3 V
V_COM = 3 V/1 V
Channel-On Leakage Current
I_COM(on)
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
V_INH
V_INL
C_in
I_INL or I_INH
V+ = 3.3 V, V_NO, V_NC = V_COM = 1 V/3 V
V_IN = 0 or V+
Turn-On Time
Turn-Off Time
Break-Before-Make Time
Charge Injection^d
Off-Isolation^d
Crosstalk^d
N_O, N_C Off Capacitance^d
Channel-On Capacitance^d
t_ON
t_OFF
t_d
Q_INJ
OIRR
X_TALK
C_NO(off)
C_NC(off)
C_NO(on)
C_NC(on)
V_NO or V_NC = 2.0 V, R_L = 300 W, C_L = 35 pF
C_L = 1 nF, V_GEN = 0 V, R_GEN = 0 W
R_L = 50 W, C_L = 5 pF, f = 1 MHz
V_IN = 0 or V+, f = 1 MHz
Temp^a
Full
Room
Full
Room
Room
Room
Full
Room
Full
Room
Full
Full
Full
Full
Full
Room
Full
Room
Full
Full
Room
Room
Room
Room
Room
Room
Room
Limits
- 40 to 85_C
Min^b Typ^c Max^b
0
V+
0.85
1.6
1.7
0.16
0.15
-1
1
- 10
10
-1
1
- 10
10
-1
1
- 10
10
2
0.4
4
-1
1
40
65
67
35
60
62
1
3
7
- 67
- 70
63
67
200
196
Unit
V
W
nA
V
pF
mA
ns
pC
dB
pF
www.vishay.com
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Document Number: 71971
S-03423—Rev. B, 03-Mar-03