CNY75 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Optocoupler with Phototransistor Output

CNY75A/ B/ C/ GA/ GB/ GC
Vishay Semiconductors
Order Information
Part
CNY75A
CNY75B
CNY75C
CNY75GA
CNY75GB
CNY75GC
Remarks
CTR 63 - 125 %, DIP-6
CTR 100 - 200 %, DIP-6
CTR 160 - 320 %, DIP-6
CTR 63 - 125 %, DIP-6
CTR 100 - 200 %, DIP-6
CTR 160 - 320 %, DIP-6
G = Leadform 10.16 mm; G is not marked on the body
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
Value
Unit
Reverse voltage
V_R
5
V
Forward current
I_F
60
mA
Forward surge current
t_p ≤ 10 µs
I_FSM
3
A
Power dissipation
P_diss
100
mW
Junction temperature
T_j
125
°C
Output
Parameter
Test condition
Symbol
Value
Unit
Collector base voltage
V_CBO
90
V
Collector emitter voltage
V_CEO
90
V
Emitter collector voltage
V_ECO
7
V
Collector current
I_C
50
mA
Collector peak current
t_p/T = 0.5, t_p ≤ 10 ms
I_CM
100
mA
Power dissipation
P_diss
150
mW
Junction temperature
T_j
125
°C
Coupler
Parameter
Test condition
AC isolation test voltage (RMS) t = 1 min
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
2 mm from case, t ≤ 10 s
Symbol
V_ISO
P_tot
T_amb
T_stg
T_sld
Value
3750
250
- 55 to + 100
- 55 to + 125
260
Unit
V_RMS
mW
°C
°C
°C
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2
Document Number 83536
Rev. 1.7, 26-Oct-04