CNY74-2H_08 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output,Multichannel

CNY74-2H/CNY74-4H
Vishay Semiconductors ^{Optocoupler, Phototransistor Output,}
Multichannel
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
COUPLER
AC isolation test voltage (RMS)
Total power dissipation
Ambient temperature range
Storage temperature range
Soldering temperature
t = 1 min
2 mm from case, t ≤ 10 s
V_ISO ⁽²⁾
P_tot
T_amb
T_stg
T_sld
5000
250
- 40 to + 100
- 55 to + 125
260
V_RMS
mW
°C
°C
°C
Notes
(1) _{Tamb = 25 °C, unless otherwise specified.}
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) _{Related to standard climate 23/50 DIN 50014.}
(3) _{Refer to wave profile for soldering conditions for through hole devices (DIP).}
ELECTRICAL CHARACTERISTCS ⁽¹⁾
PARAMETER
INPUT
Forward voltage
OUTPUT
Collector emitter voltage
Emitter collector voltage
Collector dark current
COUPLER
DC isolation test voltage
Isolation resistance
Collector emitter saturation voltage
Cut-off frequency
Coupling capacitance
TEST CONDITION
SYMBOL MIN.
I_F = 50 mA
V_F
I_C = 1 mA
I_E = 100 µA
V_CE = 20 V, I_F = 0 A, E = 0
t=2s
V_IO = 1000 V, 40 %
relative humidity
I_F = 10 mA, I_C = 1 mA
V_CE = 5 V, I_F = 10 mA, R_L = 100 Ω
f = 1 MHz
V_CEO
V_ECO
I_CEO
V_ISO(2)
R_IO(2)
V_CEsat
f_c
C_k
70
7
5000
TYP.
1.25
10¹²
100
0.3
MAX.
1.6
100
0.3
UNIT
V
V
V
nA
V
Ω
V
kHz
pF
Note
(1) _{Tamb = 25 °C, unless otherwise specified. Minimum and maximum values were tested requierements. Typical values are characteristics of the}
device and are the result of engineering evaluations. Typical values are for information only and are not part of the testing requirements.
(2) _{Related to standard climate 23/50 DIN 50014.}
CURRENT TRANSFER RATIO
PARAMETER
I_C/I_F
TEST CONDITION
V_CE = 5 V, I_F = 5 mA
V_CE = 5 V, I_F = 10 mA
SYMBOL
CTR
CTR
MIN.
50
60
TYP.
100
120
MAX.
600
UNIT
%
%
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
V_S = 5 V, I_C = 2 mA, R_L = 100 Ω (see figure 1)
V_S = 5 V, I_C = 2 mA, R_L = 100 Ω (see figure 1)
V_S = 5 V, I_C = 2 mA, R_L = 100 Ω (see figure 1)
V_S = 5 V, I_C = 2 mA, R_L = 100 Ω (see figure 1)
V_S = 5 V, I_C = 2 mA, R_L = 100 Ω (see figure 1)
V_S = 5 V, I_C = 2 mA, R_L = 100 Ω (see figure 1)
V_S = 5 V, I_C = 10 mA, R_L = 1 kΩ (see figure 2)
V_S = 5 V, I_C = 10 mA, R_L = 1 kΩ (see figure 2)
SYMBOL
t_d
t_r
t_f
t_s
t_on
t_off
t_on
t_off
MIN.
TYP.
3.0
3.0
4.7
0.3
6.0
5.0
9.0
18.0
MAX.
UNIT
µs
µs
µs
µs
µs
µs
µs
µs
www.vishay.com
2
For technical questions, contact: [e-mail]
Document Number: 83526
Rev. 1.5, 07.-Dec-07