CNY70_08 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Reflective Optical Sensor with Transistor Output

CNY70
Vishay Semiconductors
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector current
Power dissipation
Junction temperature
Test condition
T_amb ≤ 25 °C
Symbol
V_CEO
V_ECO
I_C
P_V
T_j
300
Coupled device
200
Phototransistor
100
IR - diode
0
0
95 11071
25
50
75
100
T_amb - Ambient Temperature (°C)
Figure 1. Power Dissipation Limit vs. Ambient Temperature
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Coupler
Parameter
Test condition
Symbol
Min
Collector current
V_CE = 5 V, I_F = 20 mA,
d = 0.3 mm (figure 2)
I_C1)
0.3
Cross talk current
Collector emitter saturation
voltage
V_CE = 5 V, I_F = 20 mA (figure 1)
I_F = 20 mA, I_C = 0.1 mA,
d = 0.3 mm (figure 2)
I_CX2)
V_CEsat1)
1) _{Measured with the ‘Kodak neutral test card", white side with 90 % diffuse reflectance}
2) _{Measured without reflecting medium}
Input (Emitter)
Parameter
Forward voltage
Radiant intensity
Peak wavelength
Virtual source diameter
Test condition
Symbol
Min
I_F = 50 mA
V_F
I_F = 50 mA, t_P = 20 ms
I_e
I_F = 100 mA
λ_P
940
Method: 63 % encircled energy
Ø
Output (Detector)
Parameter
Collector emitter voltage
Emitter collector voltage
Collector dark current
Test condition
I_C = 1 mA
I_E = 100 µA
V_CE = 20 V, I_f = 0, E = 0
Symbol
Min
V_CEO
32
V_ECO
5
I_CEO
Value
32
7
50
100
100
Typ.
1.0
Typ.
1.25
1.2
Typ.
Unit
V
V
mA
mW
°C
Max
Unit
mA
600
nA
0.3
V
Max
Unit
1.6
V
7.5
mW/sr
nm
mm
Max
Unit
V
V
200
nA
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2
Document Number 83751
Rev. 1.6, 04-Sep-06