CNY17_13 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, with Base Connection

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CNY17
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Forward surge current
LED power dissipation
OUTPUT
t_p ≤ 10 μs
at 25 °C
V_R
6
V
I_F
60
mA
I_FSM
2.5
A
P_diss
70
mW
Collector emitter breakdown voltage
Emitter base breakdown voltage
Collector current
Power dissipation
COUPLER
BV_CEO
70
V
BV_EBO
7
V
I_C
50
mA
t_p/T = 0.5, t_p ≤ 10 ms
I_C
100
mA
P_diss
150
mW
Isolation test voltage between emitter and detector
Creepage distance
t=1s
V_ISO
5000
≥7
V_RMS
mm
Clearance distance
≥7
mm
Isolation thickness between emitter and detector
≥ 0.4
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
Isolation resistance
Storage temperature
Operating temperature
Soldering temperature ⁽¹⁾
Total power dissipation
V_IO = 500 V, T_amb = 25 °C
V_IO = 500 V, T_amb = 100 °C
2 mm from case, ≤ 10 s
≥ 175
R_IO
≥ 10¹²
Ω
R_IO
≥ 10¹¹
Ω
T_stg
- 55 to + 150
°C
T_amb
- 55 to + 110
°C
T_sld
260
°C
P_diss
220
mW
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) _{Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering conditions for through}
hole devices (DIP).
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
Thermal resistance
OUTPUT
Collector emitter capacitance
Collector base capacitance
Emitter base capacitance
Thermal resistance
COUPLER
I_F = 60 mA
I_R = 10 μA
V_R = 6 V
V_R = 0 V, f = 1 MHz
V_CE = 5 V, f = 1 MHz
V_CE = 5 V, f = 1 MHz
V_CE = 5 V, f = 1 MHz
V_F
1.39
1.65
V
V_BR
6
V
I_R
0.01
10
μA
C_O
25
pF
R_th
750
K/W
C_CE
5.2
pF
C_CB
6.5
pF
C_EB
7.5
pF
R_th
500
K/W
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
V_F = 10 mA, I_C = 2.5 mA
V_CE = 10 V
CNY17-1
CNY17-2
CNY17-3
CNY17-4
V_CEsat
C_C
I_CEO
I_CEO
I_CEO
I_CEO
0.25
0.4
V
0.6
pF
2
50
nA
2
50
nA
5
100
nA
5
100
nA
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Rev. 1.9, 25-Oct-12
2
Document Number: 83606
For technical questions, contact: [e-mail]
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000