CNY17F Datasheet, PDF (2/9 Pages) Siemens Semiconductor Group – PHOTOTRANSISTOR NO BASE CONNECTION OPTOCOUPLER

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CNY17F
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
t ≤ 10 μs
V_R
6
V
I_F
60
mA
I_FSM
2.5
A
P_diss
100
mW
Collector emitter breakdown voltage
Collector current
Collector peak current
Output power dissipation
COUPLER
BV_CEO
70
V
I_C
50
mA
t_p/T = 0.5, t_p ≤ 10 ms
I_CM
100
mA
P_diss
150
mW
Isolation test voltage between emitter and
detector
t = 1 min
V_ISO
5000
V_RMS
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature ⁽¹⁾
Total power dissipation
2 mm from case, ≤ 10 s
T_stg
-55 to +150
°C
T_amb
-55 to +110
°C
T_j
100
°C
T_sld
260
°C
P_diss
250
mW
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) _{Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through}
hole parts (DIP).
300
Coupled device
250
200
Phototransistor
150
100
IR-diode
50
0
0 20 40 60 80 100 120
T_amb - Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
INPUT
Forward voltage
I_F = 60 mA
V_F
Breakdown voltage
Reverse current
I_R = 10 μA
V_R = 6 V
V_BR
6
I_R
Capacitance
V_R = 0 V, f = 1 MHz
C_O
OUTPUT
Collector emitter capacitance
V_CE = 5 V, f = 1 MHz
C_CE
Base collector capacitance
V_CE = 5 V, f = 1 MHz
C_BC
Emitter base capacitance
V_CE = 5 V, f = 1 MHz
C_EB
TYP.
1.39
0.01
25
5.2
6.5
7.5
MAX.
1.65
10
UNIT
V
V
μA
pF
pF
pF
pF
Rev. 2.2, 08-Jan-14
2
Document Number: 83607
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