CNY17F-2X016 Datasheet, PDF (2/9 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, no Base Connection

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CNY17F
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
DC forward current
Surge forward current
Power dissipation
OUTPUT
t ≤ 10 μs
V_R
6
V
I_F
60
mA
I_FSM
2.5
A
P_diss
70
mW
Collector emitter breakdown voltage
Collector current
Collector peak current
Output power dissipation
COUPLER
BV_CEO
70
V
I_C
50
mA
t_p/T = 0.5, t_p ≤ 10 ms
I_CM
100
mA
P_diss
150
mW
Isolation test voltage between emitter and
detector
V_ISO
5000
V_RMS
Creepage distance
≥7
mm
Clearance distance
≥7
mm
Isolation thickness between emitter and detector
≥ 0.4
mm
Comparative tracking index
per DIN IEC 112/VDE 0303, part 1
≥ 175
Isolation resistance
Storage temperature range
Ambient temperature range
Junction temperature
Soldering temperature ⁽¹⁾
V_IO = 500 V
2 mm from case, ≤ 10 s
R_IO
≥ 10¹¹
Ω
T_stg
- 55 to + 150
°C
T_amb
- 55 to + 110
°C
T_j
100
°C
T_sld
260
°C
Total power dissipation
P_diss
220
mW
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1) _{Refer to reflow profile for soldering conditions for surface mounted parts (SMD). Refer to wave profile for soldering conditions for through}
hole parts (DIP).
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Breakdown voltage
Reverse current
Capacitance
OUTPUT
I_F = 60 mA
I_R = 10 μA
V_R = 6 V
V_R = 0 V, f = 1 MHz
V_F
1.39
1.65
V
V_BR
6
V
I_R
0.01
10
μA
C_O
25
pF
Collector emitter capacitance
Base collector capacitance
Emitter base capacitance
COUPLER
V_CE = 5 V, f = 1 MHz
V_CE = 5 V, f = 1 MHz
V_CE = 5 V, f = 1 MHz
C_CE
5.2
pF
C_BC
6.5
pF
C_EB
7.5
pF
Collector emitter, saturation voltage
Coupling capacitance
Collector emitter, leakage current
I_F = 10 mA, I_C = 2.5 mA
V_CE = 10 V
CNY17F-1
CNY17F-2
CNY17F-3
CNY17F-4
V_CEsat
C_C
I_CEO
I_CEO
I_CEO
I_CEO
0.25
0.4
V
0.6
pF
2
50
nA
2
50
nA
5
100
nA
5
100
nA
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
Rev. 2.0, 25-Oct-12
2
Document Number: 83607
For technical questions, contact: [e-mail]
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