BYW178_10 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Ultra Fast Avalanche Sinterglass Diode

BYW178
Vishay Semiconductors
Ultra Fast Avalanche Sinterglass
Diode
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
40
30
20
l
l
10
0
0
94 9570
T_L = constant
5
10
15
20
25
30
I - Lead Length (mm)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
3.5
V_R = V_RRM
3.0
half sinewave
R_thJA ≤ 25 K/W
2.5
l = 10mm
2.0
1.5
1.0
0.5
R_thJA ≤ 70 K/W
PCB: d = 25 mm
0.0
0
16459
20 40 60 80 100 120 140 160 180
T_amb – Ambient Temperature (°C )
Fig. 4 - Max. Average Forward Current vs. Ambient Temperature
5
dI_F/dt = 50A/μs
4
3
2
1
0
0.1
1
10
94 9571
I_F – Forward Current ( A )
Fig. 2 - Typ. Reverse Recovery Current vs. Forward Current
1000
V_R = V_RRM
100
10
16460
1
25
50 75 100 125 150 175
T_j – Junction Temperature ( °C )
Fig. 5 - Reverse Current vs. Junction Temperature
100.000
10.000 Tj = 175°C
1.000
0.100
T _j = 25 °C
0.010
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
16458
V_F – Forward Voltage ( V )
Fig. 3 - Forward Current vs. Forward Voltage
400
350
V_R = V_RRM
300
250
P_R–Limit
@100 % V_R
200
150
P_R–Limit
100
@ 80 % V_R
50
16461
0
25
50 75 100 125 150 175
T_j – Junction Temperature (°C )
Fig. 6 - Max Reverse Power Dissipation vs. Junction Temperature
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 86047
[e-mail], [e-mail], [e-mail]
Rev. 1.7, 04-Aug-10