BYS10-25_15 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Surface Mount Schottky Barrier Rectifier

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BYS10-25 thru BYS10-45
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL BYS10-25
Maximum instantaneous forward voltage ⁽¹⁾ 1.0 A
V_F
Maximum DC reverse current ⁽¹⁾
V_RRM
T_J = 25 °C
T_J = 100 °C
I_R
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
BYS10-35
500
500
10
BYS10-45
UNIT
mV
μA
mA
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL BYS10-25
Maximum thermal resistance, junction to lead
Maximum thermal resistance, junction to ambient
Notes
(1) _{Mounted on epoxy-glass hard tissue}
(2) _{Mounted on epoxy-glass hard tissue, 50 mm}2 _{35 μm Cu}
(3) _{Mounted on Al-oxide-ceramic (Al2O3), 50 mm}2 _{35 μm Cu}
R_JL
R_JA ⁽¹⁾
R_JA ⁽²⁾
R_JA ⁽³⁾
BYS10-35
25
150
125
100
BYS10-45
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BYS10-45-E3/TR
0.064
TR
BYS10-45-E3/TR3
0.064
TR3
BYS10-45HE3/TR ⁽¹⁾
0.064
TR
BYS10-45HE3/TR3 ⁽¹⁾
0.064
TR3
Note
(1) _{AEC-Q101 qualified}
BASE QUANTITY
DELIVERY MODE
1800
7" diameter plastic tape and reel
7500
13" diameter plastic tape and reel
1800
7" diameter plastic tape and reel
7500
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 C unless otherwise noted)
7
BYS10-45
6
5
BYS10-35
4
3
R_thJA = 25 K/W
2
BYS10-25
1
R_thJA = 100 K/W
0
0
40
80
120
160
200
Junction Temperature (°C)
Fig. 1 - Max. Reverse Power Dissipation vs.
Junction Temperature
1000
100
10
V_R = V_RRM
1
0.1
0
40
80
120
160
200
Junction Temperature (°C)
Fig. 2 - Max. Reverse Current vs. Junction Temperature
Revision: 26-Mar-12
2
Document Number: 86013
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