BYG24D Datasheet, PDF (2/4 Pages) EIC discrete Semiconductors – FAST AVALANCHE RECTIFIERS

BYG24D thru BYG24J
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
BYG24D
BYG24G
Minimum
breakdown voltage
I_R = 100 µA
V_BR
200
400
Maximum
instantaneous
forward voltage ⁽¹⁾
I_F = 1 A
I_F = 1.5 A
T_J = 25 °C
V_F
1.15
1.25
Maximum
reverse current
V_R = V_RRM
T_J = 25 °C
T_J = 100 °C
I_R
1
10
Maximum reverse
recovery time
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
t_rr
140
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
BYG24J
600
UNIT
V
V
µA
ns
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BYG24D
BYG24G
Junction case
Maximum thermal resistance, junction to ambient
R_thJC
R_θJA
25
150 ⁽¹⁾
125 ⁽²⁾
Notes:
(1) Mounted on epoxy-glass hard tissue 35 µm x 17 mm² cooper area per electrode
(2) Mounted on epoxy-glass hard tissue 35 µm x 50 mm² cooper area per electrode
BYG24J
UNIT
°C/W
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PACKAGE CODE
BYG24D-E3/TR
0.064
TR
BYG24D-E3/TR3
0.064
TR3
BYG24DHE3/TR ⁽¹⁾
0.064
TR
BYG24DHE3/TR3 ⁽¹⁾
0.064
TR3
Note:
(1) Automotive grade AEC Q101 qualified
BASE QUANTITY
1800
7500
1800
7500
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
RATINGS AND CHARACTERISTICS CURVES
(T_A = 25 °C unless otherwise noted)
60
R_θJA =
50
125 K/W
155 K/W
40
175 K/W
30
V_R = V_RRM
P_R - Limit
at 100 % V_R
100
V_R = V_RRM
10
20
10
0
25
P_R - Limit
at 80 % V_R
50
75
100
125
150
Junction Temperature (°C)
Figure 1. Max. Reverse Power Dissipation vs. Junction Temperature
1
25
50
75
100
125
150
Junction Temperature (°C)
Figure 2. Reverse Current vs. Junction Temperature
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For technical questions within your region, please contact one of the following: Document Number: 88960
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Revision: 11-Apr-08