BY527_10 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Standard Avalanche Sinterglass Diode

Standard Avalanche Sinterglass
Diode
BY527
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
I_F = 1 A
I_F = 10 A
V_R = 800 V
V_R = 800 V, T_j = 100 °C
I_R = 100 μA, t_p/T = 0.01, t_p = 0.3 ms
V_R = 4 V, f = 1 MHz
I_F = 0.5 A, I_R = 1 A, i_R = 0.25 A
I_F = 1 A, dI/dt = 5 A/μs, V_R = 50 V
I_F = 1 A, dI/dt = 5 A/μs
V_F
V_F
I_R
I_R
V_(BR)
C_D
t_rr
t_rr
Q_rr
-
-
-
-
1250
-
-
-
-
TYP.
0.9
-
0.1
5
-
16
-
-
-
MAX
1
1.65
1
10
-
-
4
4
3
UNIT
V
V
μA
μA
V
pF
μs
μs
μC
TYPICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
120
l
l
100
80
T_L = constant
60
40
20
0
0
949101
5
10 15 20 25 30
l - Lead Length (mm)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
2.5
V_R = V_RRM
half sine wave
2.0
R_thJA = 45 K/W
l = 10 mm
1.5
1.0
0.5
R_thJA = 100 K/W
PCB: d = 25 mm
0
0
16423
20 40 60 80 100 120 140 160 180
T_amb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
10
T_j = 175 °C
1
0.1
0.01
T_j = 25 °C
0.001
0
16422
0.5 1
1.5 2
2.5 3
V_F - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
1000
V_R = V_RRM
100
10
1
25
16424
50 75 100 125 150 175
T_j - Junction Temperature (°C)
Fig. 4 - Reverse Current vs. Junction Temperature
Document Number: 86007 For technical questions within your region, please contact one of the following:
Rev. 1.7, 25-Aug-10
[e-mail], [e-mail], [e-mail]
www.vishay.com
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