BY268_10 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Fast Avalanche Sinterglass Diode

BY268, BY269
Vishay Semiconductors ^{Fast Avalanche Sinterglass Diode}
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART SYMBOL MIN.
Forward voltage
Reverse current
Reverse recovery time
I_F = 0.4 A
V_F
-
V_R = 1400 V
BY268
I_R
-
V_R = 1600 V
BY269
I_R
-
V_R= 1400 V, T_j = 100 °C
BY268
I_R
-
V_R= 1600 V, T_j = 100 °C
BY269
I_R
-
I_F = 0.5 A, I_R = 1 A, i_R = 0.25 A
t_rr
-
TYP.
-
1
1
-
-
-
MAX.
1.25
2
2
15
15
400
UNIT
V
μA
μA
μA
μA
ns
TYPICAL CHARACTERISTICS (T_amb = 25 C, unless otherwise specified)
120
100
80
60
l
l
40
20
0
T _L= constant
0
5
10
15 20
25 30
949090
I - Lead Length (mm)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
0.9
0.8
R_thJA = 45 K/W
I = 10 mm
0.7
0.6
0.5
0.4
R_thJA = 100 K/W
PCB: d = 25 mm
0.3
0.2
0.1
V_R = V_RRM
half sinewave
0
0 20 40 60 80 100 120 140 160 180
16413
T_amb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
10
1
T_j = 175 °C
0.1
T_j = 25 °C
0.01
0.001
0
16412
0.5
1.0
1.5
2.0
2.5
V_F - Forward Voltage (V)
Fig. 2 - Max. Forward Current vs. Forward Voltage
1000
V_R = V_RRM
100
10
1
25
16414
50 75 100 125 150 175
T_j - Junction Temperature (°C)
Fig. 4 - Max. Reverse Current vs. Junction Temperature
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106
For technical questions within your region, please contact one of the following: Document Number: 86005
[e-mail], [e-mail], [e-mail]
Rev. 1.7, 25-Aug-10