BY268_05 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Fast Avalanche Sinterglass Diode

BY268 / BY269
Vishay Semiconductors
Electrical Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Part
Symbol
Min
Typ.
Max
Unit
Forward voltage
Reverse current
Reverse recovery time
I_F = 0.4 A
V_F
V_R = 1400 V
BY268
I_R
V_R = 1600 V
BY269
I_R
V_R = 1400 V, T_j = 100 °C
BY268
I_R
V_R = 1600 V, T_j = 100 °C
BY269
I_R
I_F = 0.5 A, I_R = 1 A, i_R = 0.25 A
t_rr
1.25
V
1
2
µA
1
2
µA
15
µA
15
µA
400
ns
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
120
100
80
60
l
l
40
20
0
0
94 9090
T_L= constant
5 10 15 20 25 30
l – Lead Length ( mm )
Figure 1. Typ. Thermal Resistance vs. Lead Length
0.9
R_thJA = 45 K/W
0.8
l=10mm
0.7
0.6
0.5
0.4 ^{RthJA=100 K/W}
PCB: d = 25 mm
0.3
0.2
0.1
0.0
0
V_R = V_RRM
half sinewave
20 40 60 80
100 120 140 160 180
16413
T_amb - Ambient Temperature ( ° C )
Figure 3. Max. Average Forward Current vs. Ambient Temperature
10
1
T_j =175°C
0.1
T_j = 25°C
0.01
0.001
0.0
16412
0.5 1.0 1.5 2.0 2.5
V_F - Forward V oltage ( V )
Figure 2. Forward Current vs. Forward Voltage
1000
V_R = V_RRM
100
10
16414
1
25
50 75 100 125 150 175
T_j - Junction T emperature ( °C )
Figure 4. Reverse Current vs. Junction Temperature
www.vishay.com
2
Document Number 86005
Rev. 1.6, 13-Apr-05