BY228TR Datasheet, PDF (2/4 Pages) Vishay Siliconix – Standard Avalanche Sinterglass Diode

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BY228
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Reverse current
Total reverse recovery time
Reverse recovery time
I_F = 5 A
V_F
-
V_R = 1500 V
I_R
-
V_R = 1500 V, T_j = 140 °C
I_R
-
I_F = 1 A, - dI_F/dt = 0.05 A/μs
t_rr
-
I_F = 0.5 A, I_R = 1 A, i_R = 0.25 A
t_rr
-
TYP.
-
2
-
-
-
TYPICAL CHARACTERISTICS (T_amb = 25 C, unless otherwise specified)
MAX.
1.5
5
140
20
2
UNIT
V
μA
μA
μs
μs
40
30
20
l
l
10
0
0
94 9081
T_L = constant
5
10 15 20 25 30
l - Lead Length (mm)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
3.5
3.0
V_R = V_RRM
half sine wave
2.5
R_thJA = 25 K/W
l = 10 mm
2.0
1.5
1.0
0.5
R_thJA = 70 K/W
PCB: d = 25 mm
0
0
25 50 75 100 125 150
16408
T_amb - Ambient Temperature (°C)
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
100
10
1
0.1
0.01
0.001
0.0 0.5 1.0 1.5 2.0 2.5 3.0
16407
V_F - Forward Voltage (V)
Fig. 2 - Forward Current vs. Forward Voltage
1000
V_R = V_RRM
100
10
1
25
16409
50
75
100 125 150
T_j - Junction Temperature (°C)
Fig. 4 - Reverse Current vs. Junction Temperature
Rev. 1.8, 12-Sep-12
2
Document Number: 86003
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