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| BUD616A Datasheet, PDF (2/9 Pages) Vishay Siliconix – Silicon NPN High Voltage Switching Transistor | |||
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BUD616A
Vishay Telefunken
Maximum Thermal Resistance
Tcase = 25°C, unless otherwise specified
Parameter
Junction case
Test Conditions
Symbol
Value
Unit
RthJC
5
K/W
Electrical Characteristics
Tcase = 25°C, unless otherwise specified
Parameter
Collector cut-off current
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation
voltage
Base-emitter saturation voltage
DC forward current transfer ratio
Test Conditions
VCES = 1000 V
VCES = 1000 V; Tcase = 125°C
IC = 300 mA; L = 125 mH;
Imeasure = 100 mA
IE = 1 mA
IC = 0.25 A; IB = 65 mA
IC = 0.8 A; IB = 250 mA
IC = 0.25 A; IB = 65 mA
IC = 0.8 A; IB = 250 mA
VCE = 5 V; IC = 0.2 mA
VCE = 5 V; IC = 300 mA
VCE = 5 V; IC = 480 mA
VCE = 5 V; IC = 1.6 A
Symbol Min Typ Max Unit
ICES
50 mA
ICES
0.5 mA
V(BR)CEO 450
V
V(BR)EBO 12
VCEsat
VCEsat
VBEsat
VBEsat
hFE
17
hFE
25
hFE
12
hFE
4
V
0.2 V
0.4 V
1V
1.2 V
www.vishay.de ⢠FaxBack +1-408-970-5600
2 (9)
Document Number 86501
Rev. 1, 20âJanâ99
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