BU2006-E3 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Bridge Rectifiers

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BU2006-E3, BU2008-E3, BU2010-E3
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Maximum instantaneous forward
voltage per diode ⁽¹⁾
I_F = 10 A
T_A = 25 °C
T_A = 125 °C
V_F
Maximum reverse current per diode rated V_R
T_A = 25 °C
T_A = 125 °C
I_R
Typical junction capacitance per diode 4.0 V, 1 MHz
C_J
Note
(1) _{Pulse test: 300 μs pulse width, 1 % duty cycle}
0.95
0.85
-
110
95
MAX.
1.05
0.95
5.0
350
-
UNIT
V
μA
pF
THERMAL CHARACTERISTICS (T_A = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
BU2006
Typical thermal resistance
R_JC ⁽¹⁾
R_JA ⁽²⁾
Notes
(1) _{With 60 W air cooled heatsink}
(2) _{Without heatsink, free air}
BU2008
2.4
20
BU2010
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g) PREFERRED PACKAGE CODE
BU2006-E3/45
4.76
45
BU2006-E3/51
4.76
51
BU20065S-E3/45
4.76
45
BASE QUANTITY
20
250
20
DELIVERY MODE
Tube
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES (T_A = 25 °C unless otherwise specified)
24
5
20
16 With Heatsink
Sine-Wave, R-Load
12 ^{TC Measured at Device Bottom}
T_C
T_C
8
4
0
0
25
50
75
100
125
150
Case Temperature (°C)
Fig. 1 - Derating Curve Output Rectified Current
4
3
2
Without Heatsink
1
Sine-Wave, R-Load
Free Air, T_A
0
0
25
50
75
100
125
150
Ambient Temperature (°C)
Fig. 2 - Forward Current Derating Curve
Revision: 16-Aug-13
2
Document Number: 84804
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