BPW83_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode

BPW83
Silicon PIN Photodiode, RoHS Compliant _{Vishay Semiconductors}
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Short circuit current
Reverse light current
Angle of half sensitivity
I_R = 100 µA, E = 0
V_R = 10 V, E = 0
V_R = 0 V, f = 1 MHz, E = 0
V_R = 3 V, f = 1 MHz, E = 0
E_e = 1 mW/cm², λ = 870 nm
E_e = 1 mW/cm², λ = 870 nm
E_e = 1 mW/cm², λ = 870 nm,
V_R = 5 V
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
V_R = 10 V, λ = 870 nm
Rise time
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
Fall time
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_(BR)
I_ro
C_D
C_D
V_o
I_k
I_ra
ϕ
λ_p
λ_0.5
NEP
t_r
t_f
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
MIN.
60
43
TYP.
2
70
25
350
38
45
± 65
950
790 to 1050
4 x 10^-14
100
100
MAX.
30
40
UNIT
V
nA
pF
pF
mV
µA
µA
deg
nm
nm
W/√ Hz
ns
ns
1000
100
10
V_R = 10 V
1
20
40
60
80
100
94 8403
T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2
V_R = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81530
Rev. 1.4, 08-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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