BPW83 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode

BPW83
Vishay Telefunken
Basic Characteristics
T_amb = 25_C
Parameter
Breakdown Voltage
Test Conditions
m I_R = 100 A, E = 0
Symbol Min
V_(BR) 60
Typ
Max Unit
V
Reverse Dark Current
V_R = 10 V, E = 0
I_ro
2
30 nA
Diode Capacitance
V_R = 0 V, f = 1 MHz, E = 0
C_D
70
pF
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
V_R = 3 V, f = 1 MHz, E = 0
l E_e = 1 mW/cm², = 870 nm
l E_e = 1 mW/cm², = 870 nm
C_D
V_o
I_k
lEe = 1 mW/cm2,
= 870 nm, V_R = 5 V
I_ra
43
25
350
38
45
40 pF
mV
mA
mA
Angle of Half Sensitivity
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Noise Equivalent Power
Rise Time
Fall Time
l V_R = 10 V, = 870 nm
W V_R = 10 V, R_L = 1k ,
l = 820 nm
W V_R = 10 V, R_L = 1k ,
l = 820 nm
ϕ
ll_0p.5
NEP
t_r
t_f
±65
950
790...1050
4x10^–14
100
100
deg
nm
nm
W/√ Hz
ns
ns
Typical Characteristics (T_amb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20
94 8403
V_R=10V
40
60
80
100
T_amb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2
l^VR=5V
=950nm
1.0
0.8
0.6
0
94 8409
20
40
60
80 100
T_amb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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2 (5)
Document Number 81530
Rev. 2, 20-May-99