BPW43 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode

BPW43
Vishay Telefunken
Basic Characteristics
T_amb = 25_C
Parameter
Breakdown Voltage
Test Conditions
m I_R = 100 A, E = 0
Symbol Min
V_(BR) 32
Typ
Max Unit
V
Reverse Dark Current
V_R = 10 V, E = 0
I_ro
1
10 nA
Diode Capacitance
V_R = 0 V, f = 1 MHz, E = 0
C_D
4
pF
V_R = 5 V, f = 1 MHz, E = 0
C_D
1.5
pF
V_R = 10 V, f = 1 MHz, E = 0 C_D
1.3
pF
Open Circuit Voltage
Short Circuit Current
Reverse Light Current
E_A = 1 klx
V_o
320
l ^{EA = 1 klx}
E_e = 1 mW/cm², = 950 nm
I_k
I_k
12
6
E_A = 1 klx, V_R = 5 V
I_ra
15
lEe = 1 mW/cm2,
= 950 nm, V_R = 5 V
I_ra
4
8
mV
mA
mA
mA
mA
Angle of Half Sensitivity
ϕ
±25
deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time
W V_R = 10 V, R_L = 50 ,
l = 820 nm
ll_0p.5
t_r
900
550...1000
4
nm
nm
ns
Fall Time
W V_R = 10 V, R_L = 50 ,
l = 820 nm
t_f
4
ns
Typical Characteristics (T_amb = 25_C unless otherwise specified)
1000
1.4
100
10
1
20
40
V_R=10V
60
80
100
94 8427
T_amb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
1.2
l^VR=5V
=950nm
1.0
0.8
0.6
0
20
40
60
80 100
94 8416
T_amb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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2 (5)
Document Number 81523
Rev. 2, 20-May-99