BPW41N_11 Datasheet, PDF (2/4 Pages) Vishay Siliconix – Silicon PIN Photodiode

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BPW41N
Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit Voltage
Temperature coefficient of V_o
Short circuit current
Temperature coefficient of I_k
Reverse light current
Angle of half sensitivity
I_R = 100 μA, E = 0
V_(BR)
60
V_R = 10 V, E = 0
I_ro
V_R= 0 V, f = 1 MHz, E = 0
C_D
V_R= 3 V, f = 1 MHz, E = 0
C_D
E_e = 1 mW/cm², λ = 950 nm
V_o
E_e = 1 mW/cm², λ = 950 nm
TK_Vo
E_e = 1 mW/cm², λ = 950 nm
I_k
E_e = 1 mW/cm², λ = 950 nm
TK_Ik
E_e = 1 mW/cm², λ = 950 nm,
V_R = 5 V
I_ra
43
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
Rise time
Fall time
V_R = 10 V, λ = 950 nm
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
λ_p
λ_0.5
NEP
t_r
t_f
TYP.
2
70
25
350
- 2.6
38
0.1
45
± 65
950
870 to 1050
4 x 10^-14
100
100
MAX.
30
40
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
UNIT
V
nA
pF
pF
mV
mV/K
μA
%/K
μA
deg
nm
nm
W/√ Hz
ns
ns
1.4
1.2
V_R = 5 V
λ = 950 nm
1.0
0.8
0.6
0
20
40
60
80 100
94 8409
T_amb - Ambient Temperature (°C)
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
100
λ = 950 nm
10
1 mW/cm²
0.5 mW/cm²
0.2 mW/cm²
0.1 mW/cm²
0.05 mW/cm²
1
0.1
94 8415
0.02 mW/cm²
1
10
100
V_R - Reverse Voltage (V)
Fig. 3 - Reverse Light Current vs. Reverse Voltage
1000
100
10
1
V_R = 5 V
λ = 950 nm
80
E=0
60
f = 1 MHz
40
20
0.1
0.01
0.1
1
10
94 8414
E_e - Irradiance (mW/cm²)
Fig. 2 - Reverse Light Current vs. Irradiance
0
0.1
1
10
100
948407
V_R - Reverse Voltage (V)
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Rev. 1.6, 23-Aug-11
2
Document Number: 81522
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