BPW41N_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode

BPW41N
Silicon PIN Photodiode, RoHS Compliant _{Vishay Semiconductors}
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit Voltage
Temperature coefficient of V_o
Short circuit current
Temperature coefficient of I_k
Reverse light current
Angle of half sensitivity
I_R = 100 µA, E = 0
V_R = 10 V, E = 0
V_R= 0 V, f = 1 MHz, E = 0
V_R= 3 V, f = 1 MHz, E = 0
E_e = 1 mW/cm², λ = 950 nm
E_e = 1 mW/cm², λ = 950 nm
E_e = 1 mW/cm², λ = 950 nm
E_e = 1 mW/cm², λ = 950 nm
E_e = 1 mW/cm², λ = 950 nm,
V_R = 5 V
Wavelength of peak sensitivity
Range of spectral bandwidth
Noise equivalent power
V_R = 10 V, λ = 950 nm
Rise time
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
Fall time
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_(BR)
I_ro
C_D
C_D
V_o
TK_Vo
I_k
TK_Ik
I_ra
ϕ
λ_p
λ_0.5
NEP
t_r
t_f
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
MIN.
60
43
TYP.
2
70
25
350
- 2.6
38
0.1
45
± 65
950
870 to 1050
4 x 10^-14
100
100
MAX.
30
40
UNIT
V
nA
pF
pF
mV
mV/K
µA
%/K
µA
deg
nm
nm
W/√ Hz
ns
ns
1.4
1.2
V_R = 5 V
λ = 950 nm
1.0
0.8
0.6
0
20
40
60
80 100
94 8409
T_amb - Ambient Temperature (°C)
Fig. 1 - Relative Reverse Light Current vs. Ambient Temperature
1000
100
10
V_R = 5 V
λ = 950 nm
1
0.1
0.01
0.1
1
10
94 8414
E_e - Irradiance (mW/cm²)
Fig. 2 - Reverse Light Current vs. Irradiance
Document Number: 81522
Rev. 1.5, 08-Sep-08
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