BPW24R_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode, RoHS Compliant

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BPW24R
Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Breakdown voltage
Reverse dark current
Diode capacitance
Open circuit voltage
Temperature coefficient of V_o
Short circuit current
Temperature coefficient of I_k
Reverse light current
Absolute Spectral Sensitivity
Angle of half sensitivity
I_R = 100 μA, E = 0
V_(BR)
60
V_R = 50 V, E = 0
I_ro
V_R = 0 V, f = 1 MHz, E = 0
C_D
V_R = 5 V, f = 1 MHz, E = 0
C_D
V_R = 20 V, f = 1 MHz, E = 0
C_D
E_e = 1 mW/cm²,  = 950 nm
V_o
E_e = 1 mW/cm²,  = 950 nm
TK_Vo
E_e = 1 mW/cm²,  = 950 nm
I_k
E_A = 1 klx
TK_Ik
E_e = 1 mW/cm²,  = 950 nm,
V_R = 20 V
I_ra
45
V_R = 5 V,  = 870 nm
s()
V_R = 5 V,  = 900 nm
s()

Wavelength of peak sensitivity
_p
Range of spectral bandwidth
_0.1
400
Rise time
V_R = 20 V, R_L = 50 ,  = 820 nm
t_r
Fall time
V_R = 20 V, R_L = 50 ,  = 820 nm
t_f
TYP.
200
2
11
3.8
2.5
450
-2
55
0.1
60
0.60
0.55
± 12
900
7
7
MAX.
10
1100
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
10⁴
V_R = 50 V
10³
10²
1.4
1.2
V_R = 5 V
λ = 950 nm
1.0
UNIT
V
nA
pF
pF
pF
mV
mV/K
μA
%/K
μA
A/W
A/W
deg
nm
nm
ns
ns
10¹
0.8
10⁰
20 40 60 80 100 120
94 8454
T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
0.6
0
94 8409
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.6, 11-Aug-11
2
Document Number: 81520
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