BPW24R Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode

BPW24R
Vishay Telefunken
Basic Characteristics
T_amb = 25_C
Parameter
Breakdown Voltage
Test Conditions
m I_R = 100 A, E = 0
Symbol Min
V_(BR) 60
Typ
Max
200
Reverse Dark Current
V_R = 50 V, E = 0
I_ro
2
10
Diode Capacitance
V_R = 0 V, f = 1 MHz, E = 0
C_D
11
V_R = 5 V, f = 1 MHz, E = 0
C_D
3.8
Open Circuit Voltage
Temp. Coefficient of V_o
Short Circuit Current
V_R = 20 V, f = 1 MHz, E = 0
l E_e = 1 mW/cm², = 950 nm
l E_e = 1 mW/cm², = 950 nm
l E_e = 1 mW/cm², = 950 nm
C_D
V_o
TK_Vo
I_k
2.5
450
–2
55
Temp. Coefficient of I_k
E_A = 1 klx
TK_Ik
0.1
Reverse Light Current
Absolute Spectral Sensitivity
E_e = 1 mW/cm²,
l = 950 nm, V_R = 20 V
l V_R = 5 V, = 870 nm
l V_R = 5 V, = 900 nm
I_ra
45
60
s(l)
0.60
s(l)
0.55
Angle of Half Sensitivity
ϕ
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time
W V_R = 20 V, R_L = 50 ,
l = 820 nm
ll_0p.5
t_r
Fall Time
W V_R = 20 V, R_L = 50 ,
l = 820 nm
t_f
±12
900
600...1050
7
7
Unit
V
nA
pF
pF
pF
mV
mV/K
mA
%/K
mA
A/W
A/W
deg
nm
nm
ns
ns
Typical Characteristics (T_amb = 25_C unless otherwise specified)
10⁴
1.4
V_R=50V
10³
1.2
l^VR=5V
=950nm
10²
1.0
10¹
0.8
10⁰
20 40
60
80 100 120
94 8454
T_amb – Ambient Temperature ( °C )
Figure 1. Reverse Dark Current vs. Ambient Temperature
0.6
0
20
40
60
80 100
94 8409
T_amb – Ambient Temperature ( °C )
Figure 2. Relative Reverse Light Current vs.
Ambient Temperature
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2 (5)
Document Number 81520
Rev. 2, 20-May-99