BPW21R Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PN Photodiode

BPW21R
Vishay Telefunken
Absolute Maximum Ratings
T_amb = 25_C
Parameter
Reverse Voltage
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
x T_amb 50 °C
xt 5 s
Symbol
Value
Unit
V_R
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
10
V
300
mW
125
°C
–55...+125 °C
–55...+125 °C
260
°C
250
K/W
Basic Characteristics
T_amb = 25_C
Parameter
Test Conditions
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Dark Resistance
Open Circuit Voltage
Temp. Coefficient of V_o
Short Circuit Current
Temp. Coefficient of I_k
Reverse Light Current
Sensitivity
Angle of Half Sensitivity
m ^{IF = 50 mA}
I_R = 20 A, E = 0
V_R = 5 V, E = 0
V_R = 0 V, f = 1 MHz, E = 0
V_R = 5 V, f = 1 MHz, E = 0
V_R = 10 mV
E_A = 1 klx
E_A = 1 klx
E_A = 1 klx
E_A = 1 klx
E_A = 1 klx, V_R = 5 V
V_R = 5 V, E_A = 10^–2...10⁵ lx
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Rise Time
Fall Time
W V_R = 0 V, R_L = 1k ,
l = 660 nm
W V_R = 0 V, R_L = 1k ,
l = 660 nm
Symbol Min
V_F
V_(BR) 10
I_ro
C_D
C_D
R_D
V_o 280
TK_Vo
I_k
4.5
TK_lk
I_ra
4.5
S
ϕ
ll_0p.5
t_r
t_f
Typ
Max
1.0
1.3
2
30
1.2
400
38
450
–2
9
–0.05
9
9
±50
565
420...675
3.1
3.0
Unit
V
V
nA
nF
pF
GW
mV
mV/K
mA
%/K
mA
nA/lx
deg
nm
nm
ms
ms
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2 (5)
Document Number 81519
Rev. 2, 20-May-99