BPW20RF_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon Photodiode, RoHS Compliant

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BPW20RF
Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Dark resistance
Open circuit voltage
Temperature coefficient of V_o
Short circuit current
Temperature coefficient of I_k
Reverse light current
Angle of half sensitivity
I_F = 50 mA
V_F
I_R = 20 μA, E = 0
V_(BR)
10
V_R = 5 V, E = 0
I_ro
V_R = 0 V, f = 1 MHz, E = 0
C_D
V_R = 5 V, f = 1 MHz, E = 0
C_D
V_R = 10 mV
R_D
E_A = 1 klx
V_o
330
E_A = 1 klx
TK_Vo
E_A = 1 klx
I_k
20
E_A = 1 klx
TK_Ik
E_A = 1 klx, V_R = 5 V
I_ra
20
E_e = 1 mW/cm²,  = 950 nm,
V_R = 5 V
I_ra

Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
_p
_0.1
400
V_R = 0 V, R_L = 1 k,  = 820 nm
t_r
V_R = 0 V, R_L = 1 k,  = 820 nm
t_f
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
TYP.
1.0
2
1.2
400
38
500
-2
60
0.1
60
42
± 50
920
3.4
3.7
MAX.
1.3
30
1100
UNIT
V
V
nA
nF
pF
G
mV
mV/K
μA
%/K
μA
μA
deg
nm
nm
μs
μs
10⁴
10³
10²
V_R = 5 V
10¹
10
20 40 60 80 100 120
94 8468
T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.3
1.2
V_R = 5 V
λ = 950 nm
1.1
1.0
0.9
0.8
0
94 8469
20 40 60 80 100 120
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.7, 11-Aug-11
2
Document Number: 81570
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