BPW20RF_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon Photodiode

Silicon Photodiode, RoHS Compliant
BPW20RF
Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Dark resistance
Open circuit voltage
Temperature coefficient of V_o
Short circuit current
Temperature coefficient of I_k
Reverse light current
Angle of half sensitivity
I_F = 50 mA
I_R = 20 µA, E = 0
V_R = 5 V, E = 0
V_R = 0 V, f = 1 MHz, E = 0
V_R = 5 V, f = 1 MHz, E = 0
V_R = 10 mV
E_A = 1 klx
E_A = 1 klx
E_A = 1 klx
E_A = 1 klx
E_A = 1 klx, V_R = 5 V
E_e = 1 mW/cm², λ = 950 nm,
V_R = 5 V
Wavelength of peak sensitivity
Range of spectral bandwidth
Rise time
Fall time
V_R = 0 V, R_L = 1 kΩ, λ = 820 nm
V_R = 0 V, R_L = 1 kΩ, λ = 820 nm
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_F
V_(BR)
I_ro
C_D
C_D
R_D
V_o
TK_Vo
I_k
TK_Ik
I_ra
I_ra
ϕ
λ_p
λ_0.5
t_r
t_f
MIN.
10
330
20
20
TYP.
1.0
MAX.
1.3
2
30
1.2
400
38
500
-2
60
0.1
60
42
± 50
920
550 to 1040
3.4
3.7
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
UNIT
V
V
nA
nF
pF
GΩ
mV
mV/K
µA
%/K
µA
µA
deg
nm
nm
µs
µs
10⁴
10³
10²
V_R = 5 V
10¹
10
20 40 60 80 100 120
94 8468
T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.3
1.2
V_R = 5 V
λ = 950 nm
1.1
1.0
0.9
0.8
0
94 8469
20 40 60 80 100 120
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81570
Rev. 1.6, 08-Sep-08
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