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BPV23NF_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode, RoHS Compliant
BPV23NF, BPV23NFL
Silicon PIN Photodiode, RoHS Compliant Vishay Semiconductors
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
Open circuit voltage
Temperature coefficient of Vo
Short circuit current
Reverse light current
Temperature coefficient of Ira
Absolute spectral sensitivity
Angle of half sensitivity
IF = 50 mA
IR = 100 µA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR= 12 V, f = 1 MHz
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm,
VR = 5 V
Ee = 1 mW/cm2, λ = 950 nm,
VR = 10 V
VR = 5 V, λ = 870 nm
VR = 5 V, λ = 950 nm
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
λ = 950 nm
Noise equivalent power
VR = 10 V, λ = 950 nm
Detectivity
VR = 10 V, λ = 950 nm
Rise time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
Fall time
VR = 10 V, RL = 1 kΩ, λ = 820 nm
Cut-off frequency
VR = 12 V, RL = 1 kΩ, λ = 870 nm
VR = 12 V, RL = 1 kΩ, λ = 950 nm
Note
Tamb = 25 °C, unless otherwise specified
SYMBOL
VF
V(BR)
Iro
CD
RS
Vo
TKVo
Ik
Ira
TKIra
s(λ)
s(λ)
ϕ
λp
λ0.5
η
NEP
D*
tr
tf
fc
fc
BASIC CHARACTERISTICS
Tamb = 25 °C, unless otherwise specified
MIN.
60
45
TYP.
1
2
48
900
390
- 2.6
65
65
0.1
0.57
0.60
± 60
940
790 to 1050
90
4 x 10-14
5 x 1012
70
70
4
1
MAX.
1.3
30
UNIT
V
V
nA
pF
Ω
mV
mV/K
µA
µA
%/K
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/W
ns
ns
MHz
MHz
1000
100
10
VR = 10 V
1
20
40
60
80
100
94 8403
Tamb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2
VR = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20
40
60
80 100
Tamb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81513
Rev. 1.7, 08-Sep-08
For technical questions, contact: detectortechsupport@vishay.com
www.vishay.com
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