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| BPV23NF_06 Datasheet, PDF (2/7 Pages) Vishay Siliconix – Silicon PIN Photodiode | |||
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BPV23NF(L)
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode capacitance
Serial Resistance
IF = 50 mA
IR = 100 μA, E = 0
VR = 10 V, E = 0
VR = 0 V, f = 1 MHz, E = 0
VR = 12 V, f = 1 MHz
Symbol
VF
V(BR)
Iro
CD
RS
Optical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Open Circuit Voltage
Temp. Coefficient of Vo
Short Circuit Current
Reverse Light Current
Temp. Coefficient of Ira
Absolute Spectral Sensitivity
Angle of Half Sensitivity
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 950 nm
Ee = 1 mW/cm2, λ = 870 nm,
VR = 5 V
Ee = 1 mW/cm2, λ = 950 nm,
VR = 10 V
VR = 5 V, λ = 870 nm
VR = 5 V, λ = 950 nm
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
λ = 950 nm
Noise Equivalent Power
Detectivity
Rise Time
Fall Time
Cut-Off Frequency
VR = 10 V, λ = 950 nm
VR = 10 V, λ = 950 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 10 V, RL = 1 kΩ, λ = 820 nm
VR = 12 V, RL = 1 kΩ, λ = 870 nm
VR = 12 V, RL = 1 kΩ, λ = 950 nm
Symbol
Vo
TKVo
Ik
Ira
TKIra
s(λ)
s(λ)
Ï
λp
λ0.5
η
NEP
D*
tr
tf
fc
fc
Min
Typ.
Max
Unit
1
1.3
V
60
V
2
30
nA
48
pF
900
Ω
Min
Typ.
Max
390
- 2.6
65
45
65
0.1
0.57
0.60
± 60
940
790 to 1050
90
4 x 10-14
5 x 1012
70
70
4
1
Unit
mV
mV/K
μA
μA
%/K
A/W
A/W
deg
nm
nm
%
W/â Hz
cmâHz/W
ns
ns
MHz
MHz
www.vishay.com
2
Document Number 81513
Rev. 1.6, 13-Nov-06
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