BPV22NF_08 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode, RoHS Compliant

BPV22NF, BPV22NFL
Silicon PIN Photodiode, RoHS Compliant _{Vishay Semiconductors}
BASIC CHARACTERISTICS
PARAMETER
TEST CONDITION
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
Open circuit voltage
Temperature coefficient of V_o
Short circuit current
Reverse light current
Temperature coefficient of I_ra
Absolute spectral sensitivity
I_F = 50 mA
I_R = 100 µA, E = 0
V_R = 10 V, E = 0
V_R= 0 V, f = 1 MHz, E = 0
V_R= 12 V, f = 1 MHz
E_e = 1 mW/cm², λ = 950 nm
E_e = 1 mW/cm², λ = 950 nm
E_e = 1 mW/cm², λ = 950 nm
E_e = 1 mW/cm², λ = 870 nm,
V_R = 5 V
E_e = 1 mW/cm², λ = 950 nm,
V_R = 10 V
V_R = 5 V, λ = 870 nm
V_R = 5 V, λ = 950 nm
Angle of half sensitivity
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
λ = 950 nm
Noise equivalent power
Detectivity
Rise time
Fall time
Cut-off frequency
V_R = 10 V, λ = 950 nm
V_R = 10 V, λ = 950 nm
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
V_R = 12 V, R_L = 1 kΩ, λ = 870 nm
V_R = 12 V, R_L = 1 kΩ, λ = 950 nm
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_F
V_(BR)
I_ro
C_D
R_S
V_o
TK_Vo
I_k
I_ra
TK_Ira
s(λ)
s(λ)
ϕ
λ_p
λ_0.5
η
NEP
D*
t_r
t_f
f_c
f_c
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
MIN.
60
55
TYP.
1
2
70
400
370
- 2.6
80
85
0.1
0.57
0.6
± 60
940
790 to 1050
90
4 x 10^-14
6 x 10¹²
100
100
4
1
MAX.
1.3
30
UNIT
V
V
nA
pF
Ω
mV
mV/K
µA
µA
%/K
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/W
ns
ns
MHz
MHz
8
6
E=0
f = 1 MHz
4
2
0
0.1
1
10
100
94 8430
V_R- Reverse Voltage (V)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2
V_R = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Document Number: 81509
Rev. 1.7, 08-Sep-08
For technical questions, contact: [e-mail]
www.vishay.com
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