BPV22NF Datasheet, PDF (2/6 Pages) Vishay Siliconix – Silicon PIN Photodiode

BPV22NF(L)
Vishay Telefunken
Basic Characteristics
T_amb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Forward Voltage
Breakdown Voltage
Reverse Dark Current
Diode Capacitance
Serial Resistance
Open Circuit Voltage
Temp. Coefficient of V_o
Short Circuit Current
Reverse Light Current
Temp. Coefficient of I_ra
Absolute Spectral Sensitivity
Angle of Half Sensitivity
m ^{IF = 50 mA}
I_R = 100 A, E = 0
V_R = 10 V, E = 0
V_R = 0 V, f = 1 MHz, E = 0
V_R = 12 V, f = 1 MHz
l E_e = 1 mW/cm², = 950 nm
l E_e = 1 mW/cm², = 950 nm
l E_e = 1 mW/cm², = 950 nm
l^{Ee = 1 mW/cm2,}
= 870 nm, V_R = 5 V
E_e = 1 mW/cm²,
l = 950 nm, V_R = 10 V
l V_R = 5 V, = 870 nm
l V_R = 5 V, = 950 nm
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Quantum Efficiency
Noise Equivalent Power
Detectivity
l = 950 nm
l V_R = 10 V, = 950 nm
l V_R = 10 V, = 950 nm
Rise Time
Fall Time
Cut–Off Frequency
W V_R = 10 V, R_L = 1k ,
l = 820 nm
W V_R = 10 V, R_L = 1k ,
l = 820 nm
W V_R = 12 V, R_L = 1k ,
l = 870 nm
W V_R = 12 V, R_L = 1k ,
l = 950 nm
V_F
V_(BR)
I_ro
C_D
R_S
V_o
TK_Vo
I_k
I_ra
TK_Ira
s(l)
s(l)
ϕ
ll_0h^p.5
NEP
D^*
t_r
t_f
f_c
f_c
1
1.3
V
60
V
2
30 nA
70
pF
400
W
370
mV
–2.6
80
55
85
mV/K
mA
mA
0.1
%/K
0.57
0.6
±60
940
790...1050
90
4 x 10^–14
6x10¹²
100
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/
W
ns
100
ns
4
MHz
1
MHz
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2 (6)
Document Number 81509
Rev. 3, 16-Nov-99