BPV22F_11 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode

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BPV22F
Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Forward voltage
Breakdown voltage
Reverse dark current
Diode capacitance
Serial resistance
Open circuit voltage
Temperature coefficient of V_o
Short circuit current
Reverse light current
Temperature coefficient of I_ra
Absolute spectral sensitivity
Angle of half sensitivity
I_F = 50 mA
V_F
I_R = 100 μA, E = 0
V_(BR)
60
V_R = 10 V, E = 0
I_ro
V_R = 0 V, f = 1 MHz, E = 0
C_D
V_R= 12 V, f = 1 MHz
R_S
E_e = 1 mW/cm², λ = 950 nm
V_o
E_e = 1 mW/cm², λ = 950 nm
TK_Vo
E_e = 1 mW/cm², λ = 950 nm
I_k
E_e = 1 mW/cm², λ = 950 nm,
V_R = 5 V
I_ra
55
E_e = 1 mW/cm², λ = 950 nm,
V_R = 10 V
TK_Ira
V_R = 5 V, λ = 870 nm
s(λ)
V_R = 5 V, λ = 950 nm
s(λ)
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Quantum efficiency
λ_p
λ_0.5
λ = 950 nm
η
Noise equivalent power
Detectivity
Rise time
Fall time
Cut-off frequency
V_R = 10 V, λ = 950 nm
V_R = 10 V, λ = 950 nm
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
V_R = 10 V, R_L = 1 kΩ, λ = 820 nm
V_R = 12 V, R_L = 1 kΩ, λ = 870 nm
V_R = 12 V, R_L = 1 kΩ, λ = 950 nm
NEP
D*
t_r
t_f
f_c
f_c
TYP.
1
2
70
400
370
- 2.6
75
80
0.1
0.35
0.6
± 60
950
870 to 1050
90
4 x 10^-14
6 x 10¹²
100
100
4
1
MAX.
1.3
30
UNIT
V
V
nA
pF
Ω
mV
mV/K
μA
μA
%/K
A/W
A/W
deg
nm
nm
%
W/√ Hz
cm√Hz/W
ns
ns
MHz
MHz
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
1000
100
10
V_R = 10 V
1
20
40
60
80
100
94 8403
T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.4
1.2
V_R = 5 V
λ = 950 nm
1.0
0.8
0.6
0
94 8409
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.6, 24-Aug-11
2
Document Number: 81508
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