BPV11F Datasheet, PDF (2/6 Pages) Vishay Siliconix – Silicon NPN Phototransistor

BPV11F
Vishay Telefunken
Basic Characteristics
T_amb = 25_C
Parameter
Test Conditions
Symbol Min
Typ
Max Unit
Collector Emitter Breakdown I_C = 1 mA
V_(BR)CE 70
V
Voltage
O
Collector Dark Current
V_CE = 10 V, E = 0
I_CEO
1
50 nA
DC Current Gain
V_CE = 5 V, I_C = 5 mA, E = 0 h_FE
450
Collector Emitter Capacitance V_CE = 0 V, f = 1 MHz, E=0 C_CEO
15
pF
Collector Base Capacitance V_CB = 0 V, f = 1 MHz, E=0 C_CBO
19
pF
Collector Light Current
E_e=1 mW/cm², l=950 nm,
I_ca
3
9
mA
V_CE=5 V
Angle of Half Sensitivity
ϕ
±15
deg
Wavelength of Peak Sensitivity
Range of Spectral Bandwidth
Collector Emitter Saturation
Voltage
Turn–On Time
Turn–Off Time
Cut–Off Frequency
E_e=1 mW/cm², l=950 nm,
I_C=1 mA
W ^{VS=5 V, IC=5 mA,}
R_L=100
W ^{VS=5 V, IC=5 mA,}
R_L=100
W ^{VS=5 V, IC=5 mA,}
R_L=100
l_p
l_0.5
V_CEsat
t_on
t_off
f_c
930
nm
900...980
nm
130
300 mV
6
ms
5
ms
110
kHz
Typical Characteristics (T_amb = 25_C unless otherwise specified)
200
10⁴
160
120
R_thJA
80
40
10³
V_CE = 10V
10²
10¹
0
0
94 8300
20
40
60
80 100
T_amb – Ambient Temperature ( °C )
Figure 1. Total Power Dissipation vs.
Ambient Temperature
10⁰
20
94 8249
40
60
80
100
T_amb – Ambient Temperature ( °C )
Figure 2. Collector Dark Current vs. Ambient Temperature
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2 (6)
Document Number 81505
Rev. 3, 20-May-99