BPV10NF_15 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PIN Photodiode

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BPV10NF
Vishay Semiconductors
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
Forward voltage
I_F = 50 mA
V_F
Breakdown voltage
I_R = 100 μA, E = 0
V_(BR)
60
Reverse dark current
V_R = 20 V, E = 0
I_ro
Diode capacitance
V_R = 0 V, f = 1 MHz, E = 0
C_D
Open circuit voltage
E_e = 1 mW/cm²,  = 870 nm
V_O
Short circuit current
E_e = 1 mW/cm²,  = 870 nm
I_K
Reverse light current
E_e = 1 mW/cm²,  = 870 nm, V_R = 5 V
I_ra
E_e = 1 mW/cm²,  = 950 nm, V_R = 5 V
I_ra
30
Temperature coefficient of I_ra E_e = 1 mW/cm²,  = 870 nm, V_R = 5 V TK_Ira
Absolute spectral sensitivity
V_R = 5 V,  = 870 nm
s()
Angle of half sensitivity

Wavelength of peak sensitivity
_p
Range of spectral bandwidth
_0.5
Quantum efficiency
 = 950 nm

Noise equivalent power
Detectivity
Rise time
Fall time
V_R = 20 V,  = 950 nm
V_R = 20 V,  = 950 nm
V_R = 50 V, R_L = 50 ,  = 820 nm
V_R = 50 V, R_L = 50 ,  = 820 nm
NEP
D*
t_r
t_f
TYP.
1.0
1
11
450
50
55
60
-0.1
0.55
± 20
940
790 to 1050
70
3 x 10^-14
3 x 10¹²
2.5
2.5
MAX.
1.3
5
UNIT
V
V
nA
pF
mV
μA
μA
μA
%/K
A/W
deg
nm
nm
%
W/Hz
cmHz/W
ns
ns
BASIC CHARACTERISTICS (T_amb = 25 °C, unless otherwise specified)
1000
1.4
100
10
1
20
40
V_R = 20 V
60
80
100
94 8436
T_amb - Ambient Temperature (°C)
Fig. 1 - Reverse Dark Current vs. Ambient Temperature
1.2
1.0
0.8
0.6
0
94 8621
V_R = 5 V
E_e
=1
λ=
mW/cm²
870 nm
20
40
60
80 100
T_amb - Ambient Temperature (°C)
Fig. 2 - Relative Reverse Light Current vs. Ambient Temperature
Rev. 1.9, 29-May-15
2
Document Number: 81503
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