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| BFW92 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor | |||
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BFW92
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 25 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 2.5 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 10 mA, IB = 1 mA
DC forward current transfer ratio VCE = 1 V, IC = 2 mA
VCE = 1 V, IC = 25 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 15
V
VCEsat
0.1 0.6 V
hFE 20 100 150
hFE
20
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Signalâtoâintermodulation
ratio
Test Conditions
VCE = 5 V, IC = 2 mA, f = 300 MHz
VCE = 5 V, IC = 14 mA, f = 300 MHz
VCE = 5 V, IC = 25 mA, f = 300 MHz
VCB = 5 V, f = 1 MHz
VCE = 5 V, f = 1 MHz
W VEB = 0.5 V, f = 1 MHz
VCE = 5 V, IC = 2 mA, ZS = 50 ,
f = 500 MHz
W VCE = 5 V, IC = 10 mA, ZS = 50 ,
f = 200 MHz
W VCE = 5 V, IC = 10 mA, ZS = 50 ,
f = 800 MHz
W VCE = 6 V, IC = 10 mA, ZL = 37.5 ,
V1 = 100 mV, f1 = 183 MHz,
V2 = 100 mV, f2 = 200 MHz,
fdIM = 217 MHz
Symbol Min Typ Max Unit
fT
1 1.5
fT
2.4
fT
1.3 2.1
Ccb
0.5
Cce
0.3
Ceb
0.9
F
3.5
GHz
GHz
GHz
pF
pF
pF
dB
Gpe
23
dB
Gpe
11
dB
dIM
â45
dB
www.vishay.de ⢠FaxBack +1-408-970-5600
2 (5)
Document Number 85040
Rev. 3, 20-Jan-99
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