BFR96T Datasheet, PDF (2/10 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR96T
Vishay Telefunken
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
V_CE = 20 V, V_BE = 0
Collector-base cut-off current
V_CB = 10 V, I_E = 0
Emitter-base cut-off current
V_EB = 2.5 V, I_C = 0
Collector-emitter breakdown voltage I_C = 5 mA, I_B = 0
DC forward current transfer ratio V_CE = 10 V, I_C = 50 mA
V_CE = 10 V, I_C = 75 mA
Symbol Min Typ Max Unit
I_CES
100 mA
I_CBO
I_EBO
100 nA
10 mA
V_(BR)CEO 15
V
h_FE 25 75 150
h_FE
25
Electrical AC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
V_CE = 10 V, I_C = 50 mA, f = 500 MHz
V_CB = 10 V, f = 1 MHz
V_CE = 10 V, f = 1 MHz
W ^{VEB = 0.5 V, f = 1 MHz}
V_CE = 10 V, I_C = 50 mA, Z_S = 50 ,
f = 500 MHz
W V_CE = 10 V, I_C = 50 mA, Z_S = 50 ,
f = 800 MHz
W V_CE = 10 V, I_C = 50 mA, Z_S = 50 ,
Z_L = Z_Lopt, f = 500 MHz
V_CE = 10 V, I_C = 50 mA, d_IM = 60 dB,
W ^{f1 = 806 MHz, f2 = 810 MHz,}
Z_S = Z_L = 50
V_CE = 10 V, I_C = 50 mA, f = 800 MHz
Symbol Min Typ Max Unit
f_T
4
5
C_cb
0.85
C_ce
0.3
C_eb
3.0
F
3.3
GHz
pF
pF
pF
dB
F
3.8
dB
G_pe
16
dB
V₁ = V₂
400
mV
IP₃
34
dBm
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2 (10)
Document Number 85036
Rev. 3, 20-Jan-99