BFR93A Datasheet, PDF (2/9 Pages) NXP Semiconductors – NPN 6 GHz wideband transistor

BFR93A/BFR93AR/BFR93AW
Vishay Telefunken
Absolute Maximum Ratings
T_amb = 25_C, unless otherwise specified
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature range
Test Conditions
T_amb ≤ 60 °C
Symbol
Value
Unit
V_CBO
V_CEO
V_EBO
I_C
P_tot
T_j
T_stg
20
V
12
V
2
V
50
mA
200
mW
150
°C
–65 to +150 °C
Maximum Thermal Resistance
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol
Value
Unit
Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm³
m plated with 35 m Cu
R_thJA
450
K/W
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
V_CE = 20 V, V_BE = 0
Collector-base cut-off current
V_CB = 10 V, I_E = 0
Emitter-base cut-off current
V_EB = 2 V, I_C = 0
Collector-emitter breakdown voltage I_C = 1 mA, I_B = 0
Collector-emitter saturation voltage I_C = 50 mA, I_B = 5 mA
DC forward current transfer ratio V_CE = 5 V, I_C = 30 mA
Symbol Min Typ Max Unit
I_CES
100 mA
I_CBO
I_EBO
100 nA
10 mA
V_(BR)CEO 12
V
V_CEsat
0.1 0.4 V
h_FE 40 90 150
Electrical AC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
V_CE = 5 V, I_C = 30 mA, f = 500 MHz
V_CB = 10 V, f = 1 MHz
V_CE = 5 V, f = 1 MHz
W ^{VEB = 0.5 V, f = 1 MHz}
V_CE = 8 V, Z_S = 50 , f = 800 MHz,
W ^{IC = 5 mA}
V_CE = 8 V, Z_S = 50 , f = 800 MHz,
W ^{IC = 25 mA}
V_CE = 8 V, I_C = 25 mA, Z_S = 50 ,
Z_L = Z_Lopt, f = 800 MHz
V_CE = 8 V, I_C = 25 mA, d_IM = 60 dB,
W ^{f1 = 806 MHz, f2 = 810 MHz,}
Z_S = Z_L = 50
V_CE = 8 V, I_C = 25 mA, f = 800 MHz
Symbol Min Typ Max Unit
f_T
6
GHz
C_cb
0.45
pF
C_ce
0.2
pF
C_eb
1.5
pF
F
1.6
dB
F
2.1
dB
G_pe
14
dB
V₁ = V₂
260
mV
IP₃
31
dBm
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2 (9)
Document Number 85035
Rev. 3, 20-Jan-99