BFR92A_08 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR92A / BFR92AR / BFR92AW
Vishay Semiconductors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
15
V
V_EBO
2
V
I_C
30
mA
P_tot
200
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Symbol
R_thJA
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current V_CE = 20 V, V_BE = 0
Collector-base cut-off current V_CB = 10 V, I_E = 0
Emitter-base cut-off current
V_EB = 2 V, I_C = 0
Collector-emitter breakdown
voltage
I_C = 1 mA, I_B = 0
DC forward current transfer ratio V_CE = 10 V, I_C = 14 mA
Symbol
Min
I_CES
I_CBO
I_EBO
V_(BR)CEO
15
h_FE
65
Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Transition frequency
V_CE = 10 V, I_C = 14 mA,
f_T
f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
Collector-emitter capacitance V_CE = 10 V, f = 1 MHz
C_ce
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
Noise figure
V_CE = 10 V, I_C = 2 mA,
F
Z_S = 50 Ω, f = 800 MHz
Power gain
V_CE = 10 V, Z_S = 50 Ω,
G_pe
Z_L = Z_Lopt, I_C = 14 mA,
f = 800 MHz
Linear output voltage - two tone
intermodulation test
V_CE = 10 V, I_C = 14 mA,
d_IM = 60 dB, f₁ = 806 MHz,
f₂ = 810 MHz, Z_S = Z_L = 50 Ω
V₁ = V₂
Third order intercept point
V_CE = 10 V, I_C = 14 mA,
IP₃
f = 800 MHz
Value
450
Typ.
100
Typ.
6
0.3
0.15
0.65
1.8
16
120
24
Unit
K/W
Max
Unit
100
μA
100
nA
10
μA
V
150
Max
Unit
GHz
pF
pF
pF
dB
dB
mV
dBm
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Document Number 85033
Rev. 1.5, 08-Sep-08