BFR91 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFR91
Vishay Telefunken
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
V_CE = 20 V, V_BE = 0
Collector-base cut-off current
V_CB = 20 V, I_E = 0
Emitter-base cut-off current
V_EB = 2 V, I_C = 0
Collector-emitter breakdown voltage I_C = 1 mA, I_B = 0
DC forward current transfer ratio V_CE = 5 V, I_C = 30 mA
Symbol Min Typ Max Unit
I_CES
100 mA
I_CBO
I_EBO
100 nA
10 mA
V_(BR)CEO 12
V
h_FE 25 50 150
Electrical AC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage – two
tone intermodulation test
Third order intercept point
Test Conditions
V_CE = 5 V, I_C = 30 mA, f = 500 MHz
V_CB = 10 V, f = 1 MHz
V_CE = 10 V, f = 1 MHz
V_EB = 0.5 V, f = 1 MHz
W ^{VCE = 5 V, IC = 2 mA, f = 500 MHz,}
Z_S = 50
V_CE = 5 V, I_C = 30 mA, Z_L = Z_Lopt,
f = 500 MHz
V_CE = 5 V, I_C = 30 mA, Z_L = Z_Lopt,
f = 800 MHz
V_CE = 5 V, I_C = 30 mA, d_IM = 60 dB,
W ^{f1 = 806 MHz, f2 = 810 MHz,}
Z_S = Z_L = 50
V_CE = 5 V, I_C = 30 mA, f = 800 MHz
Symbol Min Typ Max Unit
f_T
5
GHz
C_cb
0.5
pF
C_ce
0.3
pF
C_eb
1.4
pF
F
1.9
dB
G_pe
18
dB
G_pe
13
dB
V₁ = V₂
240
mV
IP₃
30
dBm
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2 (8)
Document Number 85030
Rev. 3, 20-Jan-99