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| BFR193T_08 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor | |||
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BFR193T / BFR193TW
Vishay Semiconductors
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current VCE = 20 V, VEB = 0
Collector-base cut-off current VCB = 10 V
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA
Collector-emitter saturation
voltage
IC = 50 mA, IB = 5 mA
DC forward current transfer ratio VCE = 8 V, IC = 30 mA
Symbol
Min
Typ.
Max
Unit
ICES
100
μA
ICBO
100
nA
IEBO
1
μA
V(BR)CEO
12
V
VCEsat
0.1
0.5
V
hFE
50
100
150
www.vishay.com
2
Document Number 85073
Rev. 1.4, 08-Sep-08
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