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| BFR183TF Datasheet, PDF (2/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor | |||
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BFR183TF
Vishay Semiconductors
VISHAY
Electrical DC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector cut-off current
VCE = 15 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown
voltage
IC = 1 mA, IB = 0
Collector-emitter saturation
voltage
IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 6 V, IC = 5 mA
VCE = 8 V, IC = 20 mA
Symbol
Min
Typ.
Max
Unit
ICES
100
µA
ICBO
100
nA
IEBO
1
µA
V(BR)CEO
10
V
VCEsat
0.1
0.4
V
hFE
50
90
150
hFE
50
110
Electrical AC Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
VCE = 8 V, IC = 15 mA, f = 500 MHz
fT
7.2
GHz
VCE = 8 V, IC = 30 mA, f = 500 MHz
fT
7.5
GHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb
0.4
pF
Collector-emitter capacitance
VCE = 8 V, f = 1 MHz
Cce
0.2
pF
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ceb
0.8
pF
Noise figure
VCE = 6 V, IC = 5 mA, ZS = 75 â¦, f
F
= 10 MHz
0.9
dB
VCE = 6 V, IC = 5 mA, ZS = ZSopt, f
F
= 900 MHz
1.1
dB
VCE = 6 V, IC = 5 mA, ZS = ZSopt, f
F
= 1.75 GHz
1.7
dB
Power gain
VCE = 8 V, ZS = 50 â¦, ZL = ZLopt, IC
Gpe
15.5
dB
= 30 mA, f = 900 MHz
VCE = 8 V, ZS = 50 â¦, ZL = ZLopt, IC
Gpe
11
dB
= 30 mA, f = 1.75 GHz
Transducer gain
VCE = 8 V, IC = 30 mA, f = 900
|S21e|2
15
dB
MHz, ZO = 50 â¦
Document Number 85102
Rev. 2, 23-Sep-02
www.vishay.com
2
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