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BFR182T Datasheet, PDF (2/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor
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BFR182T/BFR182TW
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 15 V, VBE = 0
Collector-base cut-off current
VCB = 10 V, IE = 0
Emitter-base cut-off current
VEB = 1 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 6 V, IC = 5 mA
VCE = 8 V, IC = 20 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
1 mA
V(BR)CEO 10
V
VCEsat
0.1 0.4 V
hFE
50 90
hFE
100
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Transducer gain
Test Conditions
VCE = 6 V, IC = 5 mA, f = 500 MHz
VCE = 8 V, IC = 20 mA, f = 500 MHz
VCB = 10 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
VEB = 0.5 V, f = 1 MHz
VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 900 MHz
VCE = 6 V, IC = 5 mA, ZS = ZSopt,
f = 1.75 GHz
W VCE = 8 V, IC = 20 mA, ZS = 50 ,
W ZL = ZLopt, f = 900 MHz
VCE = 8 V, IC = 20 mA, ZS = 50 ,
ZL = ZLopt, f = 1.75 GHz
W VCE = 8 V, IC = 20 mA, f = 900 MHz,
Z0 = 50
Symbol Min Typ Max Unit
fT
5.5
GHz
fT
7.5
GHz
Ccb
0.3
pF
Cce
0.2
pF
Ceb
0.65
pF
F
1.5
dB
F
2.0
dB
Gpe
15
dB
Gpe
11
dB
S21e2
14
dB
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2 (4)
Document Number 85025
Rev. 2, 20-Jan-99
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