BFQ67_08 Datasheet, PDF (2/12 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFQ67 / BFQ67R / BFQ67W
Vishay Semiconductors
Maximum Thermal Resistance
Parameter
Junction ambient
Test condition
1)
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Symbol
R_thJA
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current V_CE = 20 V, V_BE = 0
Collector-base cut-off current V_CB = 15 V, I_E = 0
Emitter-base cut-off current
V_EB = 1 V, I_C = 0
Collector-emitter breakdown
voltage
I_C = 1 mA, I_B = 0
Collector-emitter saturation
voltage
I_C = 50 mA, I_B = 5 mA
DC forward current transfer ratio V_CE = 5 V, I_C = 15 mA
Symbol
Min
I_CES
I_CBO
I_EBO
V_(BR)CEO
10
V_CEsat
h_FE
65
Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Transition frequency
V_CE = 8 V, I_C = 15 mA,
f_T
f = 500 MHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
Collector-emitter capacitance V_CE = 8 V, f = 1 MHz
C_ce
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
Noise figure
V_CE = 8 V, Z_S = Z_Sopt,
F
f = 800 MHz, I_C = 5 mA
V_CE = 8 V, Z_S = Z_Sopt,
F
f = 800 MHz, I_C = 15 mA
V_CE = 8 V, Z_S = 50 Ω, f = 2 GHz,
F
I_C = 5 mA
V_CE = 8 V, Z_S = 50 Ω, f = 2 GHz,
F
I_C = 15 mA
Power gain
V_CE = 8 V, Z_S = 50 Ω, Z_L = Z_Lopt,
G_pe
I_C = 15 mA, f = 800 MHz
V_CE = 8 V, Z_S = 50 Ω, Z_L = Z_Lopt,
G_pe
I_C = 15 mA, f = 2 GHz
Linear output voltage - two tone
intermodulation test
V_CE = 8 V, I_C = 15 mA,
d_IM = 60 dB, f₁ = 806 MHz,
f₂ = 810 MHz, Z_S = Z_L = 50 Ω
V₁ = V₂
Third order intercept point
V_CE = 8 V, I_C = 15 mA,
IP₃
f = 800 MHz
Value
450
Typ.
0.1
100
Typ.
7.5
0.4
0.2
0.85
0.8
1.5
2.5
3.0
15.5
8
160
26
Unit
K/W
Max
Unit
100
μA
100
nA
1
μA
V
0.4
V
150
Max
Unit
GHz
pF
pF
pF
dB
dB
dB
dB
dB
dB
mV
dBm
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Document Number 85022
Rev. 1.6, 08-Sep-08