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| BFP92A Datasheet, PDF (2/10 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor | |||
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BFP92A/BFP92AW
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 15 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 15
V
VCEsat
0.1 0.4 V
hFE 50 100 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Transition frequency
Collector-base capacitance
Collector-emitter capacitance
Emitter-base capacitance
Noise figure
Power gain
Linear output voltage â two
tone intermodulation test
Third order intercept point
Test Conditions
VCE = 10 V, IC = 14 mA, f = 500 MHz
VCB = 10 V, f = 1 MHz
VCE = 10 V, f = 1 MHz
W VEB = 0.5 V, f = 1 MHz
VCE = 10 V, ZS = 50 , f = 800 MHz,
IC = 2 mA
VCE = 10 V, ZL = ZLopt, IC = 14 mA,
f = 800 MHz
VCE = 10 V, IC = 14 mA, dIM = 60 dB,
W f1 = 806 MHz, f2 = 810 MHz,
ZS = ZL = 50
VCE = 10 V, IC = 14 mA, f = 800 MHz
Symbol Min Typ Max Unit
fT
6
GHz
Ccb
0.25
pF
Cce
0.2
pF
Ceb
0.7
pF
F
1.8
dB
Gpe
18
dB
V1 = V2
120
mV
IP3
24
dBm
www.vishay.de ⢠FaxBack +1-408-970-5600
2 (10)
Document Number 85019
Rev. 3, 20-Jan-99
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