BFP81_08 Datasheet, PDF (2/11 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFP81
Vishay Semiconductors
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-emitter cut-off current V_CE = 25 V, V_BE = 0
Collector-base cut-off current V_CB = 20 V, I_E = 0
Emitter-base cut-off current
V_EB = 2 V, I_C = 0
Collector-emitter breakdown
voltage
I_C = 1 mA, I_B = 0
Collector-emitter saturation
voltage
I_C = 30 mA, I_B = 3 mA
DC forward current transfer ratio V_CE = 10 V, I_C = 5 mA
V_CE = 10 V, I_C = 15 mA
Symbol
Min
Typ.
Max
Unit
I_CES
100
μA
I_CBO
100
nA
I_EBO
10
μA
V_(BR)CEO
16
V
V_CEsat
0.2
0.4
V
h_FE
70
100
150
h_FE
70
100
Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Typ.
Max
Unit
Transition frequency
V_CE = 10 V, I_C = 5 mA,
f_T
f = 500 MHz
4.2
GHz
V_CE = 10 V, I_C = 15 mA,
f_T
f = 500 MHz
5.8
GHz
Collector-base capacitance
V_CB = 10 V, f = 1 MHz
C_cb
0.3
pF
Collector-emitter capacitance V_CE = 10 V, f = 1 MHz
C_ce
0.2
pF
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
1.2
pF
Noise figure
V_CE = 10 V, Z_S = 50 Ω,
F
f = 800 MHz, I_C = 5 mA
1.4
dB
V_CE = 10 V, Z_S = Z_Sopt,
F
f = 2 GHz, I_C = 10 mA
2.5
dB
Power gain
V_CE = 10 V, Z_S = 50 Ω,
G_pe
15.5
dB
Z_L = Z_Lopt, f = 800 MHz,
I_C = 5 mA
V_CE = 10 V, Z_S = 50 Ω,
G_pe
16.5
dB
Z_L = Z_Lopt, f = 800 MHz,
I_C = 10 mA
Linear output voltage - two tone V_CE = 10 V, I_C = 25 mA,
V₁ = V₂
160
mV
intermodulation test
d_IM = 60 dB, f₁ = 806 MHz,
f₂ = 810 MHz, Z_S = Z_L = 50 Ω
Third order intercept point
V_CE = 10 V, I_C = 25 mA,
IP₃
f = 800 MHz
27
dBm
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Document Number 85018
Rev. 1.5, 05-Sep-08