BFP67_08 Datasheet, PDF (2/13 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor

BFP67 / BFP67R / BFP67W
Vishay Semiconductors
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
20
V
V_CEO
10
V
V_EBO
2.5
V
I_C
50
mA
P_tot
200
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
450
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
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2
Document Number 85017
Rev. 1.6, 05-Sep-08