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BFG92A Datasheet, PDF (2/4 Pages) Vishay Siliconix – Silicon NPN Planar RF Transistor
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BFG92A
Vishay Telefunken
Electrical DC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
VCE = 20 V, VBE = 0
Collector-base cut-off current
VCB = 15 V, IE = 0
Emitter-base cut-off current
VEB = 2 V, IC = 0
Collector-emitter breakdown voltage IC = 1 mA, IB = 0
Collector-emitter saturation voltage IC = 30 mA, IB = 3 mA
DC forward current transfer ratio VCE = 10 V, IC = 14 mA
Symbol Min Typ Max Unit
ICES
100 mA
ICBO
IEBO
100 nA
10 mA
V(BR)CEO 15
V
VCEsat
0.1 0.4 V
hFE 50 100 150
Electrical AC Characteristics
Tamb = 25_C, unless otherwise specified
Parameter
Test Conditions
Symbol Min Typ Max Unit
Transition frequency
VCE = 10 V, IC = 14 mA, f = 500 MHz
fT
Collector-base capacitance VCB = 10 V, f = 1 MHz
Ccb
Collector-emitter capacitance VCE = 10 V, f = 1 MHz
Cce
Emitter-base capacitance
Noise figure
W VEB = 0.5 V, f = 1 MHz
VCE = 10 V, ZS = 50 , f = 800 MHz,
Ceb
F
IC = 2 mA
Power gain
VCE = 10 V, ZL = ZLopt, IC = 14 mA, f
Gpe
= 800 MHz
6
GHz
0.25
pF
0.2
pF
0.7
pF
1.8
dB
17
dB
Linear output voltage – two VCE = 10 V, IC = 14 mA, dIM = 60 dB, V1 = V2
120
mV
tone intermodulation test
W f1 = 806 MHz, f2 = 810 MHz, ZS = ZL
= 50
Third order intercept point
VCE = 10 V, IC = 14 mA, f = 800 MHz
IP3
24
dBm
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2 (4)
Document Number 85075
Rev. 1, 11-Nov-99
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