BF970 Datasheet, PDF (2/5 Pages) Vishay Siliconix – Silicon PNP Planar RF Transistor

BF970
Vishay Telefunken
Electrical DC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Collector cut-off current
–V_CE = 40 V, V_BE = 0
Collector-base cut-off current
–V_CB = 20 V, I_E = 0
Emitter-base cut-off current
–V_EB = 2 V, I_C = 0
Collector-emitter breakdown voltage –I_C = 1 mA, I_B = 0
DC forward current transfer ratio –V_CE = 10 V, –I_C = 3 mA
Symbol Min Typ Max Unit
–I_CES
100 mA
–I_CBO
–I_EBO
100 nA
10 mA
–V_(BR)CEO 35
V
h_FE
25 50 90
Electrical AC Characteristics
T_amb = 25_C, unless otherwise specified
Parameter
Test Conditions
Transition frequency
Collector-base capacitance
Noise figure
Power gain
Collector current for G_pbmax
–V_CE = 10 V, –I_C = 3 mA, f = 300 MHz
–V_CB = 10 V, f = 1 MHz
–V_CE = 10 V, –I_C = 3 mA, Z_S = 50 W,
f = 800 MHz
–V_CE = 10 V, –I_C = 3 mA, Z_L = 500 W,
f = 800 MHz
–V_CE = 10 V, Z_L = 500 W, f = 800 MHz
Sym- Min Typ Max Unit
bol
f_T
1000
MHz
C_cb
0.4
pF
F
4.2 5.0 dB
G_pb 13 14.5
dB
–I_C
5
mA
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2 (5)
Document Number 85005
Rev. 3, 20-Jan-99