BF543 Datasheet, PDF (2/3 Pages) Siemens Semiconductor Group – Silicon N Channel MOS FET Triode (For RF stages up to 300 MHz preferably in FM applications)

BF543
Vishay Semiconductors
Electrical DC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Drain - source breakdown
voltage
I_D = 10 µA, -V_GS = 4 V
Gate - source breakdown
voltage
±I_GS = 10 mA, V_DS = 0
Gate - source leakage current ±V_GS = 6 V, V_DS = 0
Drain current
V_DS = 10 V, V_GS = 0
Gate - source cut-off voltage
V_DS = 10 V, I_D = 20 µA
Part
Symbol
Min
Typ.
Max
Unit
V_(BR)DS
20
V
±V_(BR)GSS
7.5
12
V
±I_GSS
I_DSS
1.5
BF543A
I_DSS
1.5
BF543B
I_DSS
4.0
-V_GS(OFF)
50
nA
8.0
mA
6.5
mA
8.0
mA
2.5
V
Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
V_DS = 10 V, I_D = 4 mA, f = 1 MHz
Parameter
Test condition
Forward transadmittance
Gate 1 input capacitance
Feedback capacitance
Output capacitance
Noise figure
G_S = 2 mS, G_L = 0.5 mS,
f = 200 MHz
Power gain
G_S = 2 mS, G_L = 0.5 mS,
f = 200 MHz
Package Dimensions in mm (Inches)
Symbol
Min
Typ.
Max
Unit
|y_21s|
9.5
12
mS
C_issg1
2.7
pF
C_rss
25
fF
C_oss
0.9
pF
F
1.0
dB
G_ps
22
dB
0.4 (.016) 0.4 (.016)
3.1 (.122)
2.8 (.110)
0.4 (.016)
0.175 (.007)
0.098 (.005)
0.1 (.004) max.
2.6 (.102)
2.35 (.092)
Mounting Pad Layout
0.52 (0.020)
ISO Method E
0.9 (0.035)
2.0 (0.079)
0.95 (.037)
0.95 (.037)
0.95 (0.037)
0.95 (0.037)
17418
www.vishay.com
2
Document Number 85072
Rev. 1.5, 05-Jul-05